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Alfred Y. Cho Lucent Technologies, Liberty Corner When Alfred Cho joined Bell Laboratories in 1968, he envisioned that smaller and smaller electronic and photonic devices wouild create a need for a crystal growth technology with control of layer thickness and material composition. This insight led to the development of molecular beam epitaxy (MBE). During the early 1970’s, Cho used surface analytical techniques to understand molecular beam crystal growth under controlled high vacuum conditions. He was the first to observe the two dimensional reflection high energy electron diffraction pattern of GaAs crystal growth and the atomic smoothing of the crystal surface which ultimately formed the basis for the successful growth of superlattice and quantum well structures with atomic layer precision. MBE is used to prepare single crystal films for semiconductors, metals and insulators with exquisite control. These structures play an important role in the fabrication of consumer electronic and optical devices and other products. With 48 patents on crystal growth and semiconductor devices related to MBE, Cho is often referred to as “the father of MBE.” His many research accomplishments include construction of surface phase diagram for MBE crystal growth, the first fabrication of an MBE artificial superlattice, the first MBE IMPATT diode, mixer diode, field effect transistor operating at microwave frequencies, and the first MBE double-heterostructure laser operating at room temperature. Cho earned bachelor’s, master’s and doctoral degrees in electrical engineering from the University of Illinois. He is director of semiconductor research of the Physical Science and Engineering Division at Bell Laboratories in Murray Hill, N.J.