| Sudhakar Shet New Jersey Institute of Technology 
As the inventor of a method for magnetic field assisted assembly and a method for bonding a semiconductor on an insulator, Sudhakar
Shet's work will have a profound affect on semiconductor manufacturing and will revolutionize the heterogeneous integration of high
performance electrical microelectromechanical (MEMS) and optoelectronic devices on the same substrate. This can lead to development
of low-cost, high-performance micro-systems.
Shet's technological breakthrough also involves a method for bonding two different wafer types, for example, silicon and other chemicals such as Gallium Arsenide or Indium Phosphide shown on the III-V part of the periodic chart. In addition, thanks to his work, a semiconductor can be made on an insulator, resulting in combinations such as Sulfur, Oxygen and Iodine; Germanium, Oxygen and Iodine; and Silicon, Germanium and Iodine. His invention preserves all the advantages of modern semiconductor processing and avoids compromising or damaging the pre-existing electronics on the wafer. The process uses very large diameter silicon wafers but yet is an efficient, simple and reliable method. His method permits wafer-level batch processing and monolithic integration. Results show significantly enhanced yield through intermediate testing of the device and circuit so that assembly of defective devices can be avoided. |
